NOVASiC(www.novasic.com) has been founded in 1995. During the period of 1995 to 2000, NOVASiC developed through French and European programs the state-of the art polishing on Silicon Carbide (Saut Technologique and JESICA, EURONIM, FLASiC….).
In 2000, NOVASiC started its commercial activity by polishing for wafer manufacturers, end users as well as for laboratories. This activity enabled NOVASiC to finance the development of the polishing of other materials like nitrides, oxides….On top of that and thanks to the support of our shareholders (Banexi and Inoovacom) NOVASiC has developed the epitaxy activity.
The production plant is sized to polish thousands of wafers per month.
NOVASiC has 20 people of which 6 directly involved in R&D (3 for polishing and 3 for epitaxy hosted in the CHREA-Nice).
Product Portfolio: NOVASiC offers a wide range of services for the surface preparations like polishing, reclaim, thinning and planarization.
For the epitaxy service, we already offer service on 2 to 4’’ wafers for both homo or heteroepitaxy of SiC.
R&D: As said, the polishing activity still needs to be improve and more particularly for GaN polishing and also planarization for device manufacturers.
Concerning the epitaxy, we mainly work on fast growth epitaxy and also p-type doping. Another challenging topic is the upgrade of our hot-wall CVD reactor.
Role in the project
WP2 : NOVASiC will upgrade the actual CVD reactor from 4’’ to 6’’.
WP3 : NOVASiC will supply the planarization.