We are Eniac Last Power
Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applicationsConcepts and Objectives
Eniac Last Power
The proposal aims to make EU independent from other developed countries on wide band gap semiconductors high quality material, equipment and advanced processing. This field is of strategic importance since it involves the development of high efficient systems (of high revenue) for applications whenever an electric power is needed: from telecommunication to automotive, from consumer electronics to electrical household appliances, from industrial applications to home automation.
In particular, the consortium will develop an European technology including equipments (growth, processing and characterization), processing (growth and device fabrication) and characterization (methods and equipments) till some of the possible applications. The know how will be developed taking advantage of the presence of the most advanced public research centres and reference Universities operating on SiC and GaN technologies , large companies world leaders and many SME from 6 EU countries. 150mm 4H-SiC wafers of high quality are target establishing EU beyond the world wide state of the art, to date at 100mm wafers. Also GaN heteroepitaxy on 150mm Si wafers is considered.